Devki Talwar, Department of Physics, published “Probing optical, phonon, thermal and defect properties of 3C–SiC/Si (001)” in the journal Diamonds and Related Materials.
Comprehensive results of experimental and theoretical studies are reported to probe the optical, phonon, thermal and defect properties of 3C–SiC/Si (001). By exploiting phonon-assisted Raman scattering (RS) spectroscopy we have recognized, among the conventional optical modes [TO() ~796 cm−1 and LO() ~973 cm−1], two extra phonon features near ~625 cm−1 and 670 cm−1 — possibly falling between the forbidden gap of the acoustic and optical branches. Temperature dependent prole of the unresolved ~670 cm−1 band has indicated disordering by nearby defects and/or stress—rendering shorter phonon lifetime to instigate mode broadening.
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