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Talwar Publishes on Vibrational Spectra of Gas-Source Molecular Beam Epitaxy Grown Dilute

Devki Talwar, Department of Physics, has published in a recent issue of Applied Physics Letters. 

Talwar is the lead author of “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1−x/InP (001),” which appeared in the Semiconductors section of Volume 102, Issue 5, of Applied Physics Letters, published by the American Institute of Physics.

Abstract

Vibrational spectra of gas-source molecular beam epitaxy grown dilute InNxAs1−x/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate NAs local vibrational mode of Td-symmetry is observed near 438 cm−1 corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the NAs local mode into a doublet for the NAs–Ga1(In1)In3(Ga3) pair-defect of C3v-symmetry is consistent with our simulated results based on a sophisticated Green's function theory.

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